Analysis of electrical properties of heterojunction based on ZnIn2Se4

A. A. Attia, H. A.M. Ali, G. F. Salem, M. I. Ismail, F. F. Al-Harbi

Research output: Contribution to journalArticleResearchpeer-review

1 Citation (Scopus)

Abstract

Heterojunction of n-ZnIn2Se4/p-Si was fabricated using thermal evaporation of ZnIn2Se4 thin films of thickness 473 nm onto p-Si substrate at room temperature. The characteristics of current–voltage (I-V) for n-ZnIn2Se4/p-Si heterojunction were investigated at different temperatures ranged from 308 K to 363 K. The junction parameters namely are; rectification ratio (RR), series resistance (Rs), shunt resistance (Rsh) and diode ideality factor (n) were calculated from the analysis of I-V curves. The forward current showed two conduction mechanisms operating, which were the thermionic emission and the single trap space charge limited current in low (0 ≤ V ≤ 0.5 V) and high (V ≥ 0.7 V) ranges of voltage, respectively. The reverse current was due to the generation through Si rather than the ZnIn2Se4 film. The built-in voltage and the width of the depletion region were determined from the capacitance-voltage (C-V) measurements. The photovoltaic characteristics of the junction were also studied through the (I-V) measurements under illumination of 40 mW/cm2. The cell parameters; the short-circuit current, the open-circuit voltage and the fill factor were estimated at room temperature.

Original languageEnglish
Pages (from-to)480-486
Number of pages7
JournalOptical Materials
Volume66
DOIs
Publication statusPublished - 1 Apr 2017

Fingerprint

Heterojunctions
heterojunctions
Electric properties
electrical properties
Thermionic emission
Capacitance measurement
Thermal evaporation
thermionic emission
Voltage measurement
shunts
Electric potential
electric potential
room temperature
Open circuit voltage
rectification
short circuit currents
open circuit voltage
Electric space charge
Short circuit currents
Temperature

Keywords

  • Heterojunction
  • Junction parameters
  • Photovoltaic characteristics
  • Transport mechanisms

Cite this

Attia, A. A. ; Ali, H. A.M. ; Salem, G. F. ; Ismail, M. I. ; Al-Harbi, F. F. / Analysis of electrical properties of heterojunction based on ZnIn2Se4 In: Optical Materials. 2017 ; Vol. 66. pp. 480-486.
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Analysis of electrical properties of heterojunction based on ZnIn2Se4 . / Attia, A. A.; Ali, H. A.M.; Salem, G. F.; Ismail, M. I.; Al-Harbi, F. F.

In: Optical Materials, Vol. 66, 01.04.2017, p. 480-486.

Research output: Contribution to journalArticleResearchpeer-review

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